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  note: for detailed information on purchasing options, contact your local allegro field applications engineer or sales representative. allegro microsystems, inc. reserves the right to make, from time to time, revisions to the anticipated product life cycle plan for a product to accommodate changes in production capabilities, alternative product availabilities, or market demand. the information included herein is believed to be accurate and reliable. however, allegro microsystems, inc. assumes no responsibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use. recommended substitutions: ratiometric, linear hall-effect sensors for high-temperature operation a3515 and A3516 for new customers or new applications: ? for the a3515, please refer to the allegro a 1321 , and ? for the A3516, please refer to the allegro a 1323 . date of status change: may 2, 2005 these parts are in production but have been determined to be not for new design. this classification indicates that sale of this device is currently restricted to existing customer applications. the device should not be purchased for new design applications because obsolescence in the near future is probable. samples are no longer available. not for new design
the a 3515? and a 3516? are s en s itive, temperature- s table linear h all - effect s en s or s w ith greatly improved off s et characteri s tic s . ratiometric, linea r h all-effect s en s or s provide a voltage output that i s proportional to the applie d magnetic field and have a quie s cent output voltage that i s approximately 50 % of the s upply voltage. the s e magnetic s en s or s are ideal for u s e in linear an d r ota r y p o s itio n s en s i n g s y s tem s i n t h e h a rsh e nv i ron me n t s of aut o m o ti v e a n d in d u s t r ial a p plicati ons o v e r e x ten d ed tempe r atu r e s t o -4 0 c a n d + 15 0 c . th e a 3515? feature s an output s en s itivity of 5 m v / g , w hile the a 3516? ha s a n output s en s itivity of 2.5 m v / g . s ee the m agnetic characteri s tic s table fo r complete, individual device parametric s . each bic mos monolithic circuit integrate s a h all element, improve d tempe r atu r e - compen s atin g ci r cuit r y t o r e du ce t h e i n t r i ns ic s en s iti v ity d r i f t o f the h all element , a s mall -s ig n al h i g h - gai n am p li f ie r, a nd a r ail - t o-r ail l ow - im p e d a n ce o u t pu t s tage . a pro p r ieta r y d ynamic offs et cancelatio n tec hn i qu e , w it h an i n te rn a l h i g h -fr eq u e n cy cl o c k , r e d uce s t h e r e s id u al offs et v o lta g e , wh ich i s n or mall y ca us ed b y d e v ice o ve r m o l d i n g , tempe r at ur e d e p e n da n cie s, an d the r mal s t r e ss . thi s tech n i q ue p r o d uce s de v ice s that h a v e an e x t r emely s table q u ie s ce n t output voltage, are immune to mechanical s tre ss , and have preci s e recover - ability a f te r tem p e r at ur e cycli n g . m any prob lem s nor mally a sso ciate d w it h lo w- le v el a n al o g s i g nal s a r e minimized b y ha v i ng t h e h all element a n d amplifier in a s ingle chip. o utput preci s ion i s obtained by internal gain an d off s et trim adju s tment s during the manufacturing proce ss . these devices are supplied in a 3-pin ultra-mini-sip ?ua? package. features tempe r atu r e -s table q uie s cent o utput vo ltag e p reci s e recoverability a fter temperature cyclin g o ut p ut v olta g e pr o por tional to app lie d m a gn etic f iel d ratiomet r ic rail - to - rail o ut p u t i m prov e d s en s iti v it y 4 . 5 v t o 5 . 5 v op e r atio n immune to m echanical s tre s s s mall p ac k a g e s iz e so li d-s tate r elia b ilit y r a tiometric, linear hall-effect sensors for high-temper a ture oper a tion t e e h s a t a d d 0 1 . 1 0 5 7 2 3 51 5 an d 351 6 a l w ay s order by complete part number, e.g., a 3515l u a . p inning i s s ho w n vie w ed from branded s ide . absolute maximum ratings suppl y voltage, v c c ............................. . 8.0 v o utput v oltage, v o ............................... . 8.0 v o utput s ink current, i o ...................... . 10 m a magnetic flux densit y , b ............. . un limite d p ackage p o w e r d i ss ipatio n , p d .......................................... . see grap h op e r atin g tempe r atu r e range*, t a suffix ?e? ? .................... . -4 0 c to +8 5 c suffix ?l? ? ................... . -4 0 c to +15 0 c s to r age tempe r atu r e ran g e , t s ................................. . -6 5 c to +17 0 c * infrequent excur s ion s permitted; s e e ap plicatio ns i n f o r matio n . dwg. ph-00 6 1 supply v c c groun d 3 2 outpu t x
3515 and 3516 ratiometric, linear hall-effect sensors 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 2 dwg. fh-016a ground 2 output 3 1 x dynamic offset cancellation low-pass filter + + supply vcc vcc/2 600 400 200 20 60 100 140 0 ambient temperature in c allowable package power dissipation in milliwatts dwg. gh-046a suffix " ua" r ja = 165 c/w 40 80 120 180 700 500 300 100 160 800 suffix "e " suffix "l " suffix " u" r ja = 184 c/w copyright ? 1996, 2003 allegro microsystems, inc. functional block diagram ?
3515 and 3516 ratiometric, linear hall-effect sensors www.allegromicro.com 3 electrical characteristics over operating temperature range, at v cc = 5 v (unless otherwise noted). limits characteristic symbol test conditions min. typ. max. units supply voltage v cc operating 4.5 5.0 5.5 v supply current i cc b = 0, v cc = 6 v, i o = 0 C 7.2 10 ma quiescent v oq b = 0, i o = 1 ma, t a = 25 c 2.425 2.500 2.575 v voltage output output voltage v oh b = +x*, i o = 1 ma C 4.7C v v ol b = -x*, i o = -1 ma C 0.2 C v output i olm b = -x*, v o = 0 -1.0 -1.5 C ma source current limit bandwidth (-3 db) bw C 30 C khz clock frequency f c C 170 C khz output resistance r o i o -2 ma C 1.0 C ? wide-band e o b = 0, bw = 10 hz to 10 khz, C 400 C v output noise (rms) i o -1 ma, c o = 100 pf note 1 C typical data is at t a = 25 c and is for design information only. note 2 C negative current is defined as coming out of (sourcing) the output. * this test requires positive and negative fields sufficient to swing the output driver between fully off and saturated (on), r espec- tively. it is not intended to indicate a range of linear operation.
3515 and 3516 ratiometric, linear hall-effect sensors 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 4 magnetic characteristics over operating temperature range, at v cc = 5 v, i o = -1 ma (unless otherwise noted). part numbers a3515eua a3515lua A3516eua A3516lua characteristic* min. typ. max. min. typ. max. min. typ. max. min. typ. max. units operating temp. range, t a -40 C +85 -40 C +150 -40 C +85 -40 C +150 c sensitivity at t a = 25 c 4.50 5.00 5.50 4.50 5.00 5.50 2.25 2.50 2.75 2.25 2.50 2.75 mv/g ? sens ( ? t) at t a = max. -2.5 2.5 7.5 -2.5 2.5 7.5 -2.5 2.5 7.5 -2.5 2.5 7.5 % ? sens ( ? t) at t a = min. -9.0 -1.3 1.0 -9.0 -1.3 1.0 -9.0 -1.3 1.0 -9.0 -1.3 1.0 % ? v oq( ? t) ? CC 10 C C 10 C C 10 C C 10 g ratiometry, ? v oq( ? v) C 100 C C 100 C C 100 C C 100 C % ratiometry, ? sens ( ? v) C 100 C C 100 C C 100 C C 100 C % positive linearity, lin+ C 100 C C 100 C C 100 C C 100 C % negative linearity, linC C 100 C C 100 C C 100 C C 100 C % symmetry C 100 C C 100 C C 100 C C 100 C % note 1 C magnetic flux density is measured at most sensitive area of device located 0.0195" (0.50 mm) below the branded face of the ua package. note 2 C 10 g = 1 mt, exactly. note 3 C except for ? sens ( ? t) , typical data is at t a = 25 c and is for design information only. * see characteristics definitions for test conditions. ? this calculation (formula 1, next page) yields the devices equivalent accuracy, over the operating temperature range, in gau ss.
3515 and 3516 ratiometric, linear hall-effect sensors www.allegromicro.com 5 ratiometry. the a3515xua and A3516xua feature a ratiometric output. the quiescent voltage output and sensitivity are proportional to the supply voltage (ratiometric). the per cent ratiometric change in the quiescent voltage output is defined as ? v oq( ? v) = v oq(vcc) / v oq(5v) x 100% (4) v cc / 5 v and the per cent ratiometric change in sensitivity is defined as ? sens ( ? v) = sens (vcc) / sens (5v) x 100% (5) v cc / 5 v linearity and symmetry. the on-chip output stage is de- signed to provide a linear output to within 500 mv of either rail with a supply voltage of 5 v. this is equivalent to approxi- mately 800 gauss of ambient field. although application of stronger magnetic fields will not damage these devices, it will force the output into a non-linear region. linearity in per cent is measured and defined as lin+ = v o(500g) C v oq x 100% (6) 2 (v o(250g) C v oq ) linC = v o(-500g) C v oq x 100% (7) 2 (v o(-250g) C v oq ) and output symmetry as sym = v o(500g) C v oq x 100% (8) v oq C v o(-500g) characteristics definitions quiescent voltage output. in the quiescent state (no mag- netic field), the output is ideally equal to one-half of the supply voltage over the operating voltage and temperature range (v oq v cc / 2 ). due to internal component tolerances and thermal considerations, there is a tolerance on the quiescent voltage output and on the quiescent voltage output as a function of supply voltage and ambient temperature. for purposes of specification, the quiescent voltage output as a function of temperature is defined as ? v oq( ? t) = v oq(ta) C v oq(25 c) (1) sens (25 c) this calculation yields the devices equivalent accuracy, over the operating temperature range, in gauss. sensitivity. the presence of a south-pole magnetic field perpendicular to the package face (the branded surface) will increase the output voltage from its quiescent value toward the supply voltage rail by an amount proportional to the magnetic field applied. conversely, the application of a north pole will decrease the output voltage from its quiescent value. this proportionality is specified as the sensitivity of the device and is defined as sens = v o(500g) C v o(-500g) (2) 1000 g the stability of sensitivity as a function of temperature is defined as ? sens ( ? t) = sens (ta) C sens (25 c) x 100% (3) sens (25 c)
3515 and 3516 ratiometric, linear hall-effect sensors 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 6 typical characteristics 0 25 50 75 100 ambient temperature in c -50 dwg. gh-039-2 125 -25 supply current in ma 9.0 8.0 7.0 6.0 150 vcc = 5.5 v 0 25 50 75 100 1.4 0.4 ambient temperature in c 1.2 0.8 -50 dwg. gh-060-1 output resistance in ? ? ? ? 150 -25 125 1.0 0.6 vcc = 5 v i o = -1 ma i o = 1 ma i o = 5 ma i o = 10 ma 0 25 50 75 100 ambient temperature in c 2.55 2.45 -50 dwg. gh-067 quiescent output voltage in volts 150 -25 125 2.50 vcc = 5 v io = -1 ma A3516 a3515 2.46 2.47 2.48 2.49 2.51 2.52 2.53 2.54 0 25 50 75 100 6.0 1.0 ambient temperature in c 5.0 3.0 -50 dwg. gh-066 sensitivity in mv/g 150 -25 125 4.0 2.0 A3516 a3515 vcc = 5 v io = -1 ma 0
3515 and 3516 ratiometric, linear hall-effect sensors www.allegromicro.com 7 1 3 2 dwg. mh-011-7a 0.0195" 0.50 mm nom branded surface active area depth 0.081" 2.06 mm 0.056" 1.42 mm a suffix ua b n x 6.9 g/a dwg. ah-005a typical current-sensing application sensor location applications information calibrated linear hall devices, which can be used to deter- mine the actual flux density presented to the sensor in a particu- lar application, are available. for safe, reliable operation, the output should not be pulled above the supply voltage or pulled below the device ground. for optimum performance, a 0.1 f capacitor between the supply and ground, and a 100 pf capacitor between the output and ground, should be added. the ratiometric feature is especially valuable when these devices are used with an analog-to-digital converter. a/d converters typically derive their lsb step size by ratioing off a reference voltage line. if the reference voltage varies, the lsb will vary proportionally. this is a major error source in many sensing systems. the a3515xua and A3516xua can eliminate this source of error by their ratiometric operation. because their gain and offsets are proportional to the supply voltage, if they are powered from the a/d reference voltage, the sensor output voltage will track changes in the lsb value. these devices can withstand infrequent temperature excur- sions, beyond the absolute maximum ratings, to t a = 170 c provided the junction temperature, t j , does not exceed 200 c. extensive applications information on hall-effect sensors and magnets is also available in the hall-effect ic applications guide, which can be found in the latest issue of the allegro microsystems electronic data book , ams-702 or application note 27701, or at www.allegromicro.com allegro
3515 and 3516 ratiometric, linear hall-effect sensors 115 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 8 0 0 relative distance relative magnetic flux density dwg. gh-048 relative output voltage v cc v oq -0.4 -0.2 0.2 0.4 + gnd - n s d 0.19 0 0 relative distance (total effective air gap) relative magnetic flux density dwg. gh-047 relative output voltage v cc v oq n s d sensor depth below package face 0.1 0.2 0.3 0.4 0.5 + 0 0 relative distance relative magnetic flux density dwg. gh-050 relative output voltage v cc v oq n s 0.05 0.10 0.15 0.20 0.25 + d effective air gap 0.21 effective air gap = 0.050 effective air gap = 0.075 effective air gap = 0.095 0 0 relative distance relative magnetic flux density dwg. gh-049 relative output voltage v cc v oq -0.06 -0.04 0.04 0.06 0.08 + gnd - -0.08 0.10 -0.10 n s s n n s s n d 0.21 d 0.19 s n n s typical position-sensing applications (alnico 8, dimensions in inches)
3515 and 3516 ratiometric, linear hall-effect sensors www.allegromicro.com 9 a3515xua and A3516xua dimensions in inches (controlling dimensions) dimensions in millimeters (for reference only) notes: 1. tolerances on package height and width represent allowable mold offsets. dimensions given are measured at the widest point (parting line). 2. exact body and lead configuration at vendor? option within limits shown. 3. height does not include mold gate flash. 4. recommended minimum pwb hole diameter to clear transition area is 0.035" (0.89 mm). 5. where no tolerance is specified, dimension is nominal. 6. supplied in bulk pack (500 pieces per bag). dwg. mh-014e in 0.164 0.159 0.062 0.058 0.0173 0.0138 0.050 bsc 45 0.640 0.600 0.0189 0.0142 0.085 max 45 0.031 123 0.122 0.117 see note dwg. mh-014e mm 4.17 4.04 1.57 1.47 0.44 0.35 1.27 bsc 45 16.26 15.24 0.48 0.36 2.16 max 45 0.79 123 3.10 2.97 see note radial lead form (order a351xxua-lc) note: lead-form dimensions are the nominals produced on the forming equipment. no dimensional tolerance is implied or guaranteed for bulk packaging (500 pieces per bag). 0.620" 0.500" (15.7 mm 12.7 mm) 0.100" (2.5 mm) dwg. mh-026 0.108" (2.74 mm) 123
3 51 5 an d 3 5 1 6 r a tiometric, linear hall-effect sensors 1 15 northeast cutoff, box 15036 worcester, massachusetts 01615-0036 (508) 853-5000 1 0 0.095 0.00 5 0.020 min flat dwg. mh-015 i n 0.004 ma x 0.002 ma x 0 ? 8 2.41 0.1 3 0.51 min flat dwg . mh-015 m m 0.10 ma x 0.051 ma x 0 ? 8 horizontal-mount lead form (order a351xxua-tl) note : supplied in bulk pack (500 devices per bag). dimensions in inches (controlling dimensions) dimensions in millimeters (for reference only) 0.062 0.038 dwg. ma-013-3 in 0.050 bsc 1.5 7 0.9 7 dwg. ma-013-3 mm 1.2 7 bsc the products described herein are manufactured under one or more of the following u.s. patents: 5,045,920; 5,264,783; 5,442,283; 5,389,889; 5,581,179; 5,517,112; 5,619,137; 5,621,319; 5,650,719; 5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending. allegro microsystems, inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. before placing an order, the user is cautioned to verify that the information being relied upon is current. allegro products are not authorized for use as critical components in life-support appliances, devices, or systems without express written approval. the information included herein is believed to be accurate and reliable. however, allegro microsystems, inc. assumes no responsibil- ity for its use; nor for any infringements of patents or other rights of third parties that may result from its use.


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